MOSIS PARAMETRIC TEST RESULTS
RUN: T46U (MM_NON-EPI_THK-MTL) VENDOR: TSMC
TECHNOLOGY: SCN018 FEATURE SIZE: 0.18 microns
INTRODUCTION: This report contains the lot average results obtained by MOSIS
from measurements of MOSIS test structures on each wafer of
this fabrication lot. SPICE parameters obtained from similar
measurements on a selected wafer are also attached.
COMMENTS: DSCN6M018_TSMC
TRANSISTOR PARAMETERS W/L N-CHANNEL P-CHANNEL UNITS
MINIMUM 0.27/0.18
Vth 0.50 -0.52 volts
SHORT 20.0/0.18
Idss 571 -272 uA/um
Vth 0.51 -0.52 volts
Vpt 4.7 -5.4 volts
WIDE 20.0/0.18
Ids0 18.3 -7.3 pA/um
LARGE 50/50
Vth 0.43 -0.41 volts
Vjbkd 3.1 -4.1 volts
Ijlk <50.0 <50.0 pA
K' (Uo*Cox/2) 170.6 -36.9 uA/V^2
Low-field Mobility 395.24 85.49 cm^2/V*s
COMMENTS: Poly bias varies with design technology. To account for mask
bias use the appropriate value for the parameters XL and XW
in your SPICE model card.
Design Technology XL (um) XW (um)
----------------- ------- ------
SCN6M_DEEP (lambda=0.09) 0.00 -0.01
thick oxide 0.00 -0.01
SCN6M_SUBM (lambda=0.10) -0.02 0.00
thick oxide -0.02 0.00
FOX TRANSISTORS GATE N+ACTIVE P+ACTIVE UNITS
Vth Poly >6.6 <-6.6 volts
PROCESS PARAMETERS N+ P+ POLY N+BLK PLY+BLK M1 M2 UNITS
Sheet Resistance 6.6 7.5 7.8 60.0 315.9 0.08 0.08 ohms/sq
Contact Resistance 10.5 11.0 9.7 4.35 ohms
Gate Oxide Thickness 40 angstrom
PROCESS PARAMETERS M3 POLY_HRI M4 M5 M6 N_W UNITS
Sheet Resistance 0.08 995.2 0.07 0.07 0.01 937 ohms/sq
Contact Resistance 8.81 13.55 17.98 20.88 ohms
COMMENTS: BLK is silicide block.
CAPACITANCE PARAMETERS N+ P+ POLY M1 M2 M3 M4 M5 M6 R_W D_N_W M5P N_W UNITS
Area (substrate) 983 1169 104 38 18 13 8 8 3 125 125 aF/um^2
Area (N+active) 8535 53 20 14 11 9 8 aF/um^2
Area (P+active) 8285 aF/um^2
Area (poly) 64 17 10 7 5 4 aF/um^2
Area (metal1) 39 15 9 6 5 aF/um^2
Area (metal2) 39 14 9 6 aF/um^2
Area (metal3) 39 15 9 aF/um^2
Area (metal4) 38 14 aF/um^2
Area (metal5) 37 1029 aF/um^2
Area (r well) 965 aF/um^2
Area (d well) 581 aF/um^2
Area (no well) 142 aF/um^2
Fringe (substrate) 264 231 -- 58 53 40 23 -- aF/um
Fringe (poly) 61 39 29 24 20 18 aF/um
Fringe (metal1) 55 34 22 20 aF/um
Fringe (metal2) 50 35 27 25 aF/um
Fringe (metal3) 53 35 31 aF/um
Fringe (metal4) 58 41 aF/um
Fringe (metal5) 67 aF/um
Overlap (N+active) 918 aF/um
Overlap (P+active) 676 aF/um
CIRCUIT PARAMETERS UNITS
Inverters K
Vinv 1.0 0.76 volts
Vinv 1.5 0.80 volts
Vol (100 uA) 2.0 0.08 volts
Voh (100 uA) 2.0 1.63 volts
Vinv 2.0 0.83 volts
Gain 2.0 -24.09
Ring Oscillator Freq.
D1024_THK (31-stg,3.3V) 312.44 MHz
DIV1024 (31-stg,1.8V) 378.93 MHz
Ring Oscillator Power
D1024_THK (31-stg,3.3V) 0.07 uW/MHz/gate
DIV1024 (31-stg,1.8V) 0.02 uW/MHz/gate
COMMENTS: DEEP_SUBMICRON
T46U SPICE BSIM3 VERSION 3.1 PARAMETERS
SPICE 3f5 Level 8, Star-HSPICE Level 49, UTMOST Level 8
* DATE: Sep 16/04
* LOT: T46U WAF: 1002
* Temperature_parameters=Default
.MODEL CMOSN NMOS ( LEVEL = 49
+VERSION = 3.1 TNOM = 27 TOX = 4E-9
+XJ = 1E-7 NCH = 2.3549E17 VTH0 = 0.3802346
+K1 = 0.5780058 K2 = 3.629306E-3 K3 = 0.0898746
+K3B = 0.2934675 W0 = 1E-7 NLX = 1.587896E-7
+DVT0W = 0 DVT1W = 0 DVT2W = 0
+DVT0 = 1.331311 DVT1 = 0.416923 DVT2 = 0.0131901
+U0 = 293.6913905 UA = -1.172299E-9 UB = 2.340949E-18
+UC = 8.93888E-11 VSAT = 1.060855E5 A0 = 2
+AGS = 0.4811242 B0 = 2.63443E-7 B1 = 2.925159E-6
+KETA = -0.0123909 A1 = 1.985754E-3 A2 = 0.8540382
+RDSW = 105 PRWG = 0.4211667 PRWB = -0.2
+WR = 1 WINT = 7.171764E-9 LINT = 1.571375E-8
+XL = 0 XW = -1E-8 DWG = -4.94476E-10
+DWB = 2.951718E-9 VOFF = -0.0948017 NFACTOR = 2.1860065
+CIT = 0 CDSC = 2.4E-4 CDSCD = 0
+CDSCB = 0 ETA0 = 2.968695E-3 ETAB = 6.028975E-5
+DSUB = 0.0218283 PCLM = 0.750921 PDIBLC1 = 0.1601879
+PDIBLC2 = 2.336026E-3 PDIBLCB = -0.1 DROUT = 0.736696
+PSCBE1 = 2.152675E9 PSCBE2 = 1.38226E-9 PVAG = 6.398876E-3
+DELTA = 0.01 RSH = 6.6 MOBMOD = 1
+PRT = 0 UTE = -1.5 KT1 = -0.11
+KT1L = 0 KT2 = 0.022 UA1 = 4.31E-9
+UB1 = -7.61E-18 UC1 = -5.6E-11 AT = 3.3E4
+WL = 0 WLN = 1 WW = 0
+WWN = 1 WWL = 0 LL = 0
+LLN = 1 LW = 0 LWN = 1
+LWL = 0 CAPMOD = 2 XPART = 0.5
+CGDO = 9.18E-10 CGSO = 9.18E-10 CGBO = 1E-11
+CJ = 9.804082E-4 PB = 0.8 MJ = 0.3730855
+CJSW = 2.647278E-10 PBSW = 0.8017992 MJSW = 0.1402867
+CJSWG = 3.3E-10 PBSWG = 0.8017992 MJSWG = 0.1402867
+CF = 0 PVTH0 = -8.593216E-4 PRDSW = 0.0328933
+PK2 = 6.301561E-4 WKETA = -1.854598E-3 LKETA = -2.943603E-3
+PU0 = 10.0307445 PUA = 2.32731E-11 PUB = 0
+PVSAT = 1.299662E3 PETA0 = 1.003159E-4 PKETA = -1.154913E-3 )
*
.MODEL CMOSP PMOS ( LEVEL = 49
+VERSION = 3.1 TNOM = 27 TOX = 4E-9
+XJ = 1E-7 NCH = 4.1589E17 VTH0 = -0.3842303
+K1 = 0.5578104 K2 = 0.0326732 K3 = 0.3521296
+K3B = 4.9331085 W0 = 1E-6 NLX = 1.154601E-7
+DVT0W = 0 DVT1W = 0 DVT2W = 0
+DVT0 = 0.618097 DVT1 = 0.2753847 DVT2 = 0.1
+U0 = 112.8674336 UA = 1.467875E-9 UB = 2.78705E-21
+UC = -1E-10 VSAT = 2E5 A0 = 1.9805908
+AGS = 0.4096756 B0 = 3.294596E-7 B1 = 1.033766E-6
+KETA = 6.453634E-3 A1 = 0.4759069 A2 = 0.3
+RDSW = 247.5222301 PRWG = 0.5 PRWB = 0.0293133
+WR = 1 WINT = 0 LINT = 2.657009E-8
+XL = 0 XW = -1E-8 DWG = -1.544288E-8
+DWB = 5.77182E-9 VOFF = -0.096026 NFACTOR = 2
+CIT = 0 CDSC = 2.4E-4 CDSCD = 0
+CDSCB = 0 ETA0 = 1.588792E-3 ETAB = -6.162303E-4
+DSUB = 2.412257E-3 PCLM = 1.3739234 PDIBLC1 = 3.633303E-4
+PDIBLC2 = -1E-5 PDIBLCB = 0.0726889 DROUT = 0
+PSCBE1 = 4.135592E10 PSCBE2 = 7.335114E-9 PVAG = 0.7019154
+DELTA = 0.01 RSH = 7.5 MOBMOD = 1
+PRT = 0 UTE = -1.5 KT1 = -0.11
+KT1L = 0 KT2 = 0.022 UA1 = 4.31E-9
+UB1 = -7.61E-18 UC1 = -5.6E-11 AT = 3.3E4
+WL = 0 WLN = 1 WW = 0
+WWN = 1 WWL = 0 LL = 0
+LLN = 1 LW = 0 LWN = 1
+LWL = 0 CAPMOD = 2 XPART = 0.5
+CGDO = 6.76E-10 CGSO = 6.76E-10 CGBO = 1E-11
+CJ = 1.168638E-3 PB = 0.8409532 MJ = 0.4086499
+CJSW = 2.253394E-10 PBSW = 0.8 MJSW = 0.2902373
+CJSWG = 4.22E-10 PBSWG = 0.8 MJSWG = 0.2902373
+CF = 0 PVTH0 = 3.558724E-3 PRDSW = 10.1907428
+PK2 = 3.322217E-3 WKETA = 0.0341065 LKETA = -2.645886E-3
+PU0 = -2.1784074 PUA = -7.70492E-11 PUB = 1E-21
+PVSAT = -50 PETA0 = 4.785184E-6 PKETA = -4.849212E-3 )
*
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